Instytut Technologii Elektronowej (eng. Institute of Electron Technology)

Processing equipment for fabrication, analytical instruments for characterization  and CAD tools for design of various micro- and nano- electronic semiconductor devices:

• A_IIIB_V processing line equipped with  MBE,  RIE, PECVD, photolithography, assembly and testing tools located in 350 m² clean rooms class 100 and 1000;
• CMOS/ MEMS technology line located in 1200 m² area with class 10, 100 and 1000  adjusted to process silicon wafers of 4” (100 mm) and  6” (150 mm) diameter. Photolithography equipment  enables processing with the critical dimensions up to 0,9 µm;
• Tech­no­logy line for the fabri­ca­tion of wide-gap semiconductor devi­ces set in a clean room of over 600 m² area with class 10, 100, 1000 and 10000 sec­tions;
• Production line for thick film hybrid microcircuits consisting of: screen printers, high temperature multizone furnaces, laser and air-abrasive trimming devices, ultrasonic bonders, fluidization bath, sealing cold welding equipment;
•  Low Temperature Cofired Ceramic technology (LTCC) for the fabri­ca­tion multilayer electronic devices and microfluidic structures;
• CAD tools for design of analog, digital and mixed-signal ASICs as well as  design of electronic systems based on modern microcontrollers, programmable logic and other components;
• Laboratory of structural, optical and electrical characterization of materials and devices;

Design, technology development, small scale production and/or characterization of  semiconductor devices and electronic systems:

• Technology development  and small scale manufacturing of: heterogeneous microsystems, Si-based photonic devices, micro- and nanoprobes, microsystems (MEMS) and sensors for medical and technical diagnostics, silicon based ionizing radiation detectors, terahertz radiation detectors;
• Deve­lop­ment and testing of struc­tu­res and semi­con­duc­tor devi­ces based on AIII-BV com­po­unds: semiconductor laser, QCL midrange infrared and THz detectors, superlattice infrared detectors;
• Development of wide-gap semiconductor technologies and  devi­ces: GaN based HEMT  for high power high frequency systems as well as amorphous and  transparent conducting oxides for trans­pa­rent and fle­xi­ble elec­tro­nics;
• Modeling, simulation and testing of MEMS structures;
• Optical, electrical and photoelectric characterization of semiconductor structures;
• Mixed signal ASIC’s and electronic systems design;
• Development of new materials for preparation of functional ceramic tapes with programmable properties;
• Assembly and protection of  LTCC micromodules;
• Techno-climatic reliability characterization of electronic components and devices;

Band gap analysis in MIS structures using photo electric measurements
Raman analysis of chemical composition, stress, doping and temperature of semiconductor devices